FDD6676AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETFeatures The FDD6676AS is designed to replace a single • 90 A, 30 V R = 5.7 mΩ @ V = 10 V DS(ON) ..
FDD6676AS_NL ,30V N-Channel PowerTrench SyncFETApplications low R DS(ON)• DC/DC converter • High power and current handling capability • Low side ..
FDD6676S ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6680 ,N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. R = 0.010 Ω @ V ..
FDD6680_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild• 46 A, 30 V R = 10 mΩ @ V = 10 VDS(ON) GS ..
FOD0738 ,Dual Channel CMOS OptocouplerApplications Line receivers Pulse transformer replacement Output interface to CMOS-LSTTL-TTL Wide ..
FOD2200 ,8-PIN DIP LOW INPUT CURRENT LOGIC GATE OPTOCOUPLERFEATURES APPLICATIONNC 1 8 V•1 kV/µs Minimum Common Mode • Isolation of High Speed Logic Systems CC ..
FOD250LV ,8-Pin DIP 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler 3.3VAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD260L ,LVTTL/LVCMOS 3.3V High Speed-10 MBit/s Logic Gate OptocouplersApplicationsmaximum input signal of 5 mA (3 mA for the FODX6XL ver- Ground loop elimination sions) ..
FOD260L ,LVTTL/LVCMOS 3.3V High Speed-10 MBit/s Logic Gate OptocouplersFeatures Switching power supplies Compact SO8 package (except FOD260L – 8-pin DIP) Pulse transforme ..
FOD270LSD ,8-Pin DIP Single-Channel Low Input Current High Gain Split Darlington Output OptocouplerFEATURES•Low power consumptionVN/C 1 8 + 1 8 VCCCC•Low input current - 0.5 mAVF1•Available in singl ..
FDD6676AS-FDD6676AS_NL
30V N-Channel PowerTrench SyncFET
FDD6676AS April 2005 FDD6676AS ® ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single • 90 A, 30 V R = 5.7 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 7.1 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET schottky body diode R and low gate charge. The FDD6676AS DS(ON) includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using • Low gate charge (46nC typical) Fairchild’s monolithic SyncFET technology. • High performance trench technology for extremely Applications low R DS(ON) • DC/DC converter • High power and current handling capability • Low side notebook D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 3) 90 A D – Pulsed (Note 1a) 100 P Power Dissipation for Single Operation (Note 1) 70 W D (Note 1a) 3.1 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 R °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6676AS FDD6676AS 13’’ 12mm 2500 units FDD6676AS FDD6676AS_NL (Note 4) 13’’ 12mm 2500 units FDD6676AS Rev A(X) ©2005
