FDD6676AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETFeatures The FDD6676AS is designed to replace a single • 90 A, 30 V R = 5.7 mΩ @ V = 10 V DS(ON) ..
FDD6676AS_NL ,30V N-Channel PowerTrench SyncFETApplications low R DS(ON)• DC/DC converter • High power and current handling capability • Low side ..
FDD6676S ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6680 ,N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. R = 0.010 Ω @ V ..
FDD6680_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild• 46 A, 30 V R = 10 mΩ @ V = 10 VDS(ON) GS ..
FOD0720 ,High CMR, 25Mbit/sec Logic Gate OptocouplerApplications Industrial fieldbus communications– Profibus, DeviceNet, CAN, RS485 Programmable logic ..
FOD0721 ,High CMR, 25Mbit/sec Logic Gate OptocouplerApplications Industrial fieldbus communications– Profibus, DeviceNet, CAN, RS485 Programmable logic ..
FOD0738 ,Dual Channel CMOS OptocouplerApplications Line receivers Pulse transformer replacement Output interface to CMOS-LSTTL-TTL Wide ..
FOD2200 ,8-PIN DIP LOW INPUT CURRENT LOGIC GATE OPTOCOUPLERFEATURES APPLICATIONNC 1 8 V•1 kV/µs Minimum Common Mode • Isolation of High Speed Logic Systems CC ..
FOD250LV ,8-Pin DIP 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler 3.3VAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD260L ,LVTTL/LVCMOS 3.3V High Speed-10 MBit/s Logic Gate OptocouplersApplicationsmaximum input signal of 5 mA (3 mA for the FODX6XL ver- Ground loop elimination sions) ..
FDD6676
30V N-Channel PowerTrench MOSFET
FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 78 A, 30 V R = 7.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 8.5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge low gate charge, low RDS( ON) and fast switching speed. extremely low R in a small package. DS(ON) • Fast Switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor Drives D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 3) 78 A D – Pulsed (Note 1a) 100 P W D Power Dissipation for Single Operation (Note 1) 83 (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 R °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6676 FDD6676 13’’ 12mm 2500 units FDD6676 Rev C(W) 2001
