FDD6672A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDD6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 78 A, 30 V R = 7.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETFeatures The FDD6676AS is designed to replace a single • 90 A, 30 V R = 5.7 mΩ @ V = 10 V DS(ON) ..
FDD6676AS_NL ,30V N-Channel PowerTrench SyncFETApplications low R DS(ON)• DC/DC converter • High power and current handling capability • Low side ..
FDD6676S ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FOD070LR2 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output Optocoupler LVTTL/LVCMOS COMPATIBLE LOW INPUTCURRENT HIGH GAIN SPLIT DARLINGTON ..
FOD0710 ,High CMR, 12.5Mbit/sec Logic Gate OptocouplerApplications Industrial fieldbus communications– Profibus, DeviceNet, CAN, RS485 Programmable logic ..
FOD0720 ,High CMR, 25Mbit/sec Logic Gate OptocouplerApplications Industrial fieldbus communications– Profibus, DeviceNet, CAN, RS485 Programmable logic ..
FDD6672A
30V N-Channel PowerTrench MOSFET
FDD6672A April 2001 FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 65 A, 30 V. R = 9.5 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 8 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling capability D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 65 A D – Pulsed 100 P 70 W D Maximum Power Dissipation @ T = 25°C (Note 1) C 3.2 @ T = 25°C (Note 1a) A @ T = 25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W θJC Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6672A FDD6672A 13’’ 16mm 2500 units FDD6672A Rev C (W) 2000
