FDD6670S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6672A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDD6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 78 A, 30 V R = 7.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6676AS ,30V N-Channel PowerTrench SyncFETFeatures The FDD6676AS is designed to replace a single • 90 A, 30 V R = 5.7 mΩ @ V = 10 V DS(ON) ..
FDD6676AS_NL ,30V N-Channel PowerTrench SyncFETApplications low R DS(ON)• DC/DC converter • High power and current handling capability • Low side ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FOD070LR2 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output Optocoupler LVTTL/LVCMOS COMPATIBLE LOW INPUTCURRENT HIGH GAIN SPLIT DARLINGTON ..
FOD0710 ,High CMR, 12.5Mbit/sec Logic Gate OptocouplerApplications Industrial fieldbus communications– Profibus, DeviceNet, CAN, RS485 Programmable logic ..
FDD6670S
30V N-Channel PowerTrench SyncFET
FDD6670S September 2001 FDD6670S Ò ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single · 64 A, 30 V R = 9 mW @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 12.5 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Includes SyncFET Schottky body diode R and low gate charge. The FDD6670S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of · Low gate charge (17nC typical) the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the · High performance trench technology for extremely FDD6670A in parallel with a Schottky diode. low R DS(ON) Applications · High power and current handling capability · DC/DC converter . · Motor Drives D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 3) 64 A D – Pulsed (Note 1a) 100 P Power Dissipation (Note 1) 70 W D (Note 1a) 3.2 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6670S FDD6670S 13’’ 16mm 2500 units FDD6670S Rev E(W) Ó2001
