FDD6644S ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6670 ,N-Channel/ Logic Level/ PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V ..
FDD6670A ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 66 A, 30 V. R = 0.008 Ω @ V ..
FDD6670S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6672A ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDD6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 78 A, 30 V R = 7.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6644S
30V N-Channel PowerTrench MOSFET
FDD6644S OCTOBER 2002 FDD6644S 30V N-Channel PowerTrench MOSFET General Description Features The FDD6644S is designed to replace a DPAK • 66 A, 30 V R = 8.5 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 10.0 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDD6644S includes DS(ON) an integrated Schottky diode using Fairchild’s • Low gate charge monolithic SyncFET technology. • Fast Switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) D D G G S D-PAK TO-252 S (TO-252) o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±16 I Drain Current – Continuous (Note 3) 66 A D – Pulsed (Note 1a) 100 P Power Dissipation for Single Operation (Note 1) 57 W D (Note 1a) 3.1 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.2 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6644S FDD6644S 13’’ 12mm 2500 units FDD6644S Rev B (W) 2002
