FDD6637 ,-35V P-Channel PowerTrench?MOSFETApplications • Inverter • Power Supplies DDGG SD-PAKTO-252S(TO-252) oAbsolute Maximum Ratings ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6644 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 67 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDD6644 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6644 ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (25 nC typical) • DC/DC converter • High power and current handling ..
FDD6644S ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6637
-35V P-Channel PowerTrench?MOSFET
Ò FDD6637 35V P-Channel PowerTrench MOSFET August 2006 FDD6637 Ò 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using · –55 A, –35 V R = 11.6 mW @ V = –10 V DS(ON) GS Fairchild Semiconductor’s proprietary PowerTrench R = 18 mW @ V = –4.5 V DS(ON) GS technology to deliver low Rdson and optimized Bvdss · High performance trench technology for extremely capability to offer superior performance benefit in the low R DS(ON) applications. · RoHS Compliant Applications · Inverter · Power Supplies D D G G S D-PAK TO-252 S (TO-252) o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –35 V DSS V Drain-Source Avalanche Voltage (maximum) (Note 4) –40 V DS(Avalanche) V Gate-Source Voltage ±25 V GSS I A D Continuous Drain Current @T =25°C (Note 3) –55 C @T =25°C (Note 1a) –13 A Pulsed (Note 1a) –100 P W D Power Dissipation @T =25°C (Note 3) 57 C @T =25°C (Note 1a) 3.1 A @T =25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 2.2 °C/W R qJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 qJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6637 FDD6637 D-PAK (TO-252) 13’’ 12mm 2500 units Ó2006 FDD6637 Rev C2(W)
