FDD6635 ,35V N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETApplications • Inverter • Power Supplies DDGG SD-PAKTO-252S(TO-252) oAbsolute Maximum Ratings ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6644 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 67 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDD6644 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6644 ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (25 nC typical) • DC/DC converter • High power and current handling ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6635
35V N-Channel PowerTrench?MOSFET
® FDD6635 35V N-Channel PowerTrench MOSFET February 2007 tm FDD6635 ® 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench • 59 A, 35 V R = 10 mΩ @ V = 10 V DS(ON) GS technology to deliver low Rdson and optimized Bvdss R = 13 mΩ @ V = 4.5 V DS(ON) GS capability to offer superior performance benefit in the • Fast Switching applications. • RoHS compliant Applications • Inverter • Power Supplies D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 35 V DSS V Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V DS(Avalanche) V Gate-Source Voltage V GSS ±20 I Continuous Drain Current @T =25°C (Note 3) 59 A D C @T =25°C (Note 1a) 15 A Pulsed (Note 1a) 100 E Single Pulse Avalanche Energy (Note 5) 113 mJ AS P Power Dissipation @T =25°C (Note 3) 55 W D C @T =25°C (Note 1a) 3.8 A @T=25°C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6635 FDD6635 D-PAK (TO-252) 13’’ 12mm 2500 units ©2007 FDD6635 Rev. C2(W)
