FDD6632 ,N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhmfeatures low gate charge while maintainingr = 0.058Ω (Typ), V = 10V, I = 9Alow on-resistance. DS(O ..
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FDD6632
N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhm
FDD6632 June 2002 FDD6632 ® N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mΩ General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining r = 0.058Ω (Typ), V = 10V, I = 9A low on-resistance. DS(ON) GS D Optimized for switching applications, this device improves r = 0.090Ω (Typ), V = 4.5V, I = 6A DS(ON) GS D the overall efficiency of DC/DC converters and allows Q (Typ) = 2.6nC, V = 5V operation to higher switching frequencies. g(TOT) GS Q (Typ) = 0.8nC gd Formerly developmental type 83317 C (Typ) = 255pF ISS Applications • DC/DC converters D D G G S D-PAK S TO-252 (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 9A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 4.5V) 6 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 4 A C GS θJA Pulsed Figure 4 A Power dissipation 15 W P D o o Derate above 25C0.1W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 10 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6632 FDD6632 TO-252AA 330mm 16mm 2500 units ©2002 FDD6632 Rev. B
