FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor D ..
FDD6612A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 30 A, 30 V R = 20 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6630A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6632 ,N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhmfeatures low gate charge while maintainingr = 0.058Ω (Typ), V = 10V, I = 9Alow on-resistance. DS(O ..
FDD6635 ,35V N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..
FDD6612
N-Channel/ Logic Level/ PowerTrench MOSFET
FDD6612A/FDU6612A February 2004 FDD6612A/FDU6612A Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 30 A, 30 V R = 20 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 28 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge low gate charge, low RDS( ON) , fast switching speed and extremely low R in a small package. DS(ON) · Fast Switching Applications · High performance trench technology for extremely · DC/DC converter low R DS(ON) · Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Continuous Drain Current @T =25°C (Note 3) 30 A D C @T =25°C (Note 1a) 9.5 A Pulsed (Note 1a) 60 P Power Dissipation @T =25°C (Note 1) 36 W D C @T =25°C (Note 1a) 2.8 A @T =25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 3.9 R °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 45 R °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75 Ó2004 FDD6612A/FDU6612A Rev E(W)
