FDD6606 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 75 A, 30 V R = 6 mΩ @ V = 10 V DS(ON) GSspecific ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor D ..
FDD6612A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 30 A, 30 V R = 20 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6630A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6632 ,N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhmfeatures low gate charge while maintainingr = 0.058Ω (Typ), V = 10V, I = 9Alow on-resistance. DS(O ..
FND368C , SEVEN SEGMENT DISPLAYS
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FDD6606
30V N-Channel PowerTrench MOSFET
FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 75 A, 30 V R = 6 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 8 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge low gate charge, low RDS( ON) and fast switching speed. • Fast switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor Drives D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage GSS ± 20 I Drain Current – Continuous (Note 3) 75 A D – Pulsed (Note 1a) 100 P W D Power Dissipation for Single Operation (Note 1) 71 (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6606 FDD6606 D-PAK (TO-252) 13’’ 12mm 2500 units FDD6606 Rev B (W) 2004
