FDD6530A ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFETN-Channel 30A2001FDD6
FDD6606 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 75 A, 30 V R = 6 mΩ @ V = 10 V DS(ON) GSspecific ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor D ..
FDD6612A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 30 A, 30 V R = 20 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6630A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GSspecif ..
FND368C , SEVEN SEGMENT DISPLAYS
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FDD6530A
20V N-Channel PowerTrench MOSFET
FDD6 July 5 30A FDD65 Ò Ò 20V PowerTrench This N-Channel MOSFET has been designed · A, 2R = 32 m W @ V = 4.5 V specifically to improve the overall efficiency of DC/DC R = m W @ V = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (6.5 nC typical) low gate charge, low R( ON) and fast switching speed. · Fast switching · High performance trench technology for extremely · DC/DC converter DS(ON) · Motor drives . D D G G S S o T=25C unless otherwise notedA RatingsUnits VDrain-Source Voltage20V VGate-Source Voltage ±8V IDrain Current– ContinuousAD – Pulsed PWDPower Dissipation 3 6 T, TOperating and Storage Junction Temperature Range–55 to +175 °CJ Thermal Characteristics RThermal Resistance, Junction-to-Case °C/W qJC RThermal Resistance, Junction-to-Ambient 45°C/W q RThermal Resistance, Junction-to-Ambient °C/W q Device MarkingReel SizeTape widthQuantity FDD6530AFDD6530A16mm2500 units Ó2001 (W) C FDD6630A Rev 13’’ Device Package Marking and Ordering Information JA 96(Note 1b) JA (Note 1a) 4.5(Note 1) STG 1. (Note 1b) 3.(Note 1a) 33(Note 1) 100(Note 1a) 21(Note 3) GSS DSS ParameterSymbol Absolute Maximum Ratings TO-252 low R Applications DS GSDS(ON) 47 GSDS(ON) 0 V 21 FeaturesGeneral Description MOSFETN-Channel 30A 2001
