FDD6530A ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFETN-Channel 30A2001FDD6
FDD6606 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 75 A, 30 V R = 6 mΩ @ V = 10 V DS(ON) GSspecific ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6612 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor D ..
FDD6612A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 30 A, 30 V R = 20 mΩ @ V = 10 V DS(ON) GSspecif ..
FDD6630A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GSspecif ..
FNB41060 ,Motion SPM?45 SeriesApplications Such as Air Conditioners and• Easy PCB Layout Thanks to The Built - In Bootstrap Refri ..
FNB41560 ,Motion SPM?45 SeriesApplications Such as Air Conditioners and• Easy PCB Layout Thanks to The Built - In Bootstrap Refri ..
FND368C , SEVEN SEGMENT DISPLAYS
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FDD6512A
20V N-Channel PowerTrench MOSFET
FDD6512A/FDU6512A FDD6512A/FDU6512A Ò Ò PowerTrench This N-Channel MOSFET has been designed · 36 A, 20 VR = 21 m W @ V = 4.5 V specifically to improve the overall efficiency of DC/DC R = 31 m W @ V = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (12 nC typical) low gate charge, low R, fast switching speed and extremely low R in a small package. · Fast switching · High performance trench technology for extremely · DC/DC converter DS(ON) · Motor drives D D G I-PAKG S (TO-251AA) TO-252 GDS S o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source VoltageV± IContinuous Drain Current@TADC @T=25°CA Pulsed PPower Dissipation @TWDC @T=25°CA @T=25°C A T, TOperating and Storage Junction Temperature Range–55 to +175 °CJ Thermal Characteristics RThermal Resistance, Junction-to-Case °C/W qJC Thermal Resistance, Junction-to-Ambient R°C/W q RThermal Resistance, Junction-to-Ambient °C/W q Device MarkingPackageReel SizeTape widthQuantity FDD6512AFDD6512AD-PAK (TO-252)12mm2500 units FDU6512AFDU6512AI-PAK (TO-251) Ó FDD6512A/FDU6512A Rev B (W)2001 Fairchild Semiconductor Corp. 75N/ATube 13’’ Device Package Marking and Ordering Information JA 96(Note 1b) JA 40(Note 1a) 3.5(Note 1) STG 1.6(Note 1b) 3.8(Note 1a) 43(Note 3)=25°C 100(Note 1a) 10.7(Note 1a) 36(Note 3)=25°C 12GSS DSS 20 ParameterSymbol Absolute Maximum Ratings (TO-252) D-PAK low R Applications DS(ON) ( ON) DS GSDS(ON) GSDS(ON) FeaturesGeneral Description MOSFET20V N-Channel November 2001
