FDU6296 ,30V N-Channel Fast Switching PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDU6512A ,20V N-Channel PowerTrench MOSFETFDD6512A/FDU6512AFDD6512A/FDU6512A® ®PowerTrenchThis N-Channel MOSFET has been designed• 36 A, 20 V ..
FDU6612A ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDU6612A ,30V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• M ..
FDU6644 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 67 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDU6680 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FS12KMA-4A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS12KMA-5A , MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS12VS-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS14KM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDD6296-FDU6296
30V N-Channel Fast Switching PowerTrench MOSFET
FDD6296/FDU6296 June 2004 FDD6296/FDU6296 Ò 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 50A, 30 V R = 8.8 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 11.3 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge low gate charge, low R and fast switching speed. DS(ON) · Fast switching Applications · DC/DC converter · High performance trench technology for extremely low R · Power management DS(ON) D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 GSS I Continuous Drain Current @T =25°C (Note 3) 50 A D C @TA=25°C (Note 1a) 15 Pulsed (Note 1a) 100 P Power Dissipation @T =25°C (Note 3) 52 W D C @T =25°C (Note 1a) 3.8 A @TA=25°C (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R qJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6296 FDD6296 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6296 FDU2696 I-PAK (TO-251) Tube N/A 75 Ó2004 FDD6296/FDU6296 Rev C(W)
