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FDD6035AL_NLFAIRCHILN/a210avaiN-Channel, Logic Level, PowerTrench MOSFET
FDD6035AL_NL |FDD6035ALNLFAIRCHILDN/a210avaiN-Channel, Logic Level, PowerTrench MOSFET

FDD6035AL_NL ,N-Channel, Logic Level, PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6035AL_NL ,N-Channel, Logic Level, PowerTrench MOSFETApplications• DC/DC converter• High performance trench technology for extremelylow R• Motor Drives ..
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FDD6035AL_NL
N-Channel, Logic Level, PowerTrench MOSFET
FDD6035AL July 2003 FDD6035AL Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild · 46 A, 30 V R = 12 mW @ V = 10 V DS(ON) GS Semiconductor’s advanced PowerTrench process that R = 14 mW @ V = 4.5 V DS(ON) GS has been especially tailored to minimize the on state resistance and yet maintain low gate charge for · Low gate charge superior switching performance. · Fast Switching Speed Applications · DC/DC converter · High performance trench technology for extremely low R · Motor Drives DS(ON) D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 46 A D C @T =25°C (Note 1a) 12 A Pulsed (Note 1a) 100 P Power Dissipation @T =25°C (Note 3) 56 W D C @T =25°C (Note 1a) 3.3 A @T =25°C (Note 1b) 1.5 A T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 2.7 R °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 45 RqJA (Note 1b) R 96 qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6035AL FDD6035AL D-PAK (TO-252) 13’’ 12mm 2500 units Ó2003 FDD6035AL Rev. D(W)

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