FDD5N50 ,N-Channel UniFETTM MOSFET 500V, 4A, 1.4?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDDGGSD-PAKSoMOSFET Maximum Rati ..
FDD5N50NZ ,N-Channel UniFETTM II MOSFET 500V, 4A, 1.5?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power Supply DGSD-PAKoMOSFET Maximum Rating ..
FDD5N53TM , N-Channel MOSFET 530V, 4A, 1.5Ω
FDD6030BL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V R = 16 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDD6030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionThese N-Channel logic level enhancement mode power 12 A, 30 V. R = 0.0145 Ω @ ..
FDD6035 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converter DS(ON)• Moto ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5N50
N-Channel UniFETTM MOSFET 500V, 4A, 1.4?
TM FDD5N50 N-Channel UniFET II MOSFET April 2013 FDD5N50 TM N-Channel UniFET II MOSFET 500 V, 4 A, 1.4 Features Description TM ® •R = 1.15 (Typ.) @ V = 10 V, I = 2 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 5 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • RoHS Compliant lamp ballasts. Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDD5N50 Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 4 C I Drain Current A D o - Continuous (T = 100 C) 2.4 C I Drain Current - Pulsed (Note 1) 16 A DM E Single Pulsed Avalanche Energy (Note 2) 256 mJ AS I Avalanche Current (Note 1) 4 A AR E Repetitive Avalanche Energy (Note 1) 4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 40 W C P Power Dissipation D o o - Derate above 25C0.3W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDD5N50 Unit R Thermal Resistance, Junction to Case, Max. 1.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA ©2008 1 FDD5N50 Rev. C0
