FDD5810 ,N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhmsFeatures Motor / Body Load Control R = 22mΩ (Typ.), V = 5V, I = 29ADS(ON) GS D ABS Systems Q = ..
FDD5810_F085 ,N-Channel Logic Level Trench?MOSFET! 60V, 36A, 27m?Features! Motor / Body Load Control! R = 22m"!#Typ.), V = 5V, I = 29ADS(ON) GS D! ABS Systems! Q = ..
FDD5N50 ,N-Channel UniFETTM MOSFET 500V, 4A, 1.4?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDDGGSD-PAKSoMOSFET Maximum Rati ..
FDD5N50NZ ,N-Channel UniFETTM II MOSFET 500V, 4A, 1.5?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power Supply DGSD-PAKoMOSFET Maximum Rating ..
FDD5N53TM , N-Channel MOSFET 530V, 4A, 1.5Ω
FDD6030BL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V R = 16 mΩ @ V = 10 V DS(ON) GSspecifi ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5810
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhms
N O I T A T ® FDD5810 N-Channel Logic Level Trench MOSFET N E M E L MP I E E October 2007 FDD5810 ® N-Channel Logic Level Trench MOSFET 60V, 36A, 27mΩ Applications Features Motor / Body Load Control R = 22mΩ (Typ.), V = 5V, I = 29A DS(ON) GS D ABS Systems Q = 13nC (Typ.), V = 5V g(5) GS Powertrain Management Low Miller Charge Injection System Low Q Body Diode rr DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q101 Primary Switch for 12V and 24V systems RoHS Compliant D D G G S D-PAK TO-252 (TO-252) S ©2006 1 FDD5810 Rev. A (W) R F D A E L
