FDD5680 ,N-Channel, PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converterDS(on)• Motor ..
FDD5680 ,N-Channel, PowerTrench MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild• 38 A, 60 V. R = 0.021 Ω @ V = ..
FDD5690 ,60V N-Channel PowerTrench TM MOSFET ( ")* ..
FDD5810 ,N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhmsFeatures Motor / Body Load Control R = 22mΩ (Typ.), V = 5V, I = 29ADS(ON) GS D ABS Systems Q = ..
FDD5810_F085 ,N-Channel Logic Level Trench?MOSFET! 60V, 36A, 27m?Features! Motor / Body Load Control! R = 22m"!#Typ.), V = 5V, I = 29ADS(ON) GS D! ABS Systems! Q = ..
FDD5N50 ,N-Channel UniFETTM MOSFET 500V, 4A, 1.4?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDDGGSD-PAKSoMOSFET Maximum Rati ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5680
N-Channel, PowerTrench MOSFET
FDD5680 July 2000 FDD5680 N-Channel, PowerTrench MOSFET Features General Description This N-Channel MOSFET is produced using Fairchild • 38 A, 60 V. R = 0.021 Ω @ V = 10 V DS(on) GS Semiconductor's advanced PowerTrench process that has R = 0.025 Ω @ V = 6 V. been especially tailored to minimize the on-state DS(on) GS resistance and yet maintain low gate charge for superior • Low gate charge (33nC typical). switching performance. • Fast switching speed. Applications • High performance trench technology for extremely low R . • DC/DC converter DS(on) • Motor drives D D G G S S TO-252 o TA=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS ± I Maximun Drain Current - Continuous (Note 1) 38 A D (Note 1a) 8.5 Maximum Drain Current - Pulsed 100 o P Maximum Power Dissipation @ T = 25 C (Note 1) 60 W D C o (Note 1a) T = 25 C 2.8 A o T = 25 C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to- Case (Note 1) 2.1 C/W JC ° θ (Note 1b) R Thermal Resistance, Junction-to- Ambient 96 C/W JA ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5680 FDD5680 13’’ 16mm 2500 2000 Fairchild Semiconductor International FDD5680, Rev. C
