FDD5670 ,60V N-Channel PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor d ..
FDD5680 ,N-Channel, PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converterDS(on)• Motor ..
FDD5680 ,N-Channel, PowerTrench MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild• 38 A, 60 V. R = 0.021 Ω @ V = ..
FDD5690 ,60V N-Channel PowerTrench TM MOSFET ( ")* ..
FDD5810 ,N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhmsFeatures Motor / Body Load Control R = 22mΩ (Typ.), V = 5V, I = 29ADS(ON) GS D ABS Systems Q = ..
FDD5810_F085 ,N-Channel Logic Level Trench?MOSFET! 60V, 36A, 27m?Features! Motor / Body Load Control! R = 22m"!#Typ.), V = 5V, I = 29ADS(ON) GS D! ABS Systems! Q = ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5670
60V N-Channel PowerTrench MOSFET
FDD5670 September 2000 FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 52 A, 60 V R = 15 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 18 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge low gate charge, low RDS( ON) and fast switching speed. extremely low R in a small package. DS(ON) • Fast switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor drives . D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS VGSS Gate-Source Voltage ±20 V I Drain Current – Continuous (Note 3) 52 A D – Pulsed (Note 1a) 150 P W D Power Dissipation for Single Operation (Note 1) 83 (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5670 FDD5670 13’’ 16mm 2500 units 2000 FDD5670 Rev B(W)
