FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
FDD5612 ,60V N-Channel PowerTrench MOSFETFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronou ..
FDD5614 ,60V P-Channel PowerTrench MOSFETApplications• DC/DC converter • High performance trench technology for extremelylow RDS(ON)• Power ..
FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
FDD5670 ,60V N-Channel PowerTrench MOSFETApplications• High performance trench technology for extremely• DC/DC converterlow RDS(ON)• Motor d ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD5202P
P-Channel/ Logic Level/ MOSFET
FDD5202P February 1999 PRELIMINARY FDD5202P P-Channel, Logic Level, MOSFET Features General Description This P-Channel Logic level MOSFET is produced using • -8 A, -60 V. R = 0.3 Ω @ V = -10 V DS(on) GS Fairchild Semiconductor's advanced process that has R = 0.5 Ω @ V = -4.5 V. been especially tailored to minimize the on state DS(on) GS resistance and yet maintain low gate charge for superior • Low gate charge (15.5nC typical). switching performance. • Fast switching speed. Applications • DC/DC converter • Motor drives • L.D.O. S D G G S TO-252 D o TA=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage -60 V DSS V Gate-Source Voltage 20 V GSS ± (Note 1) I Drain Current - Continuous -8 A D (Note 1a) -2.3 - Pulsed -15 o (Note 1) P Maximum Power Dissipation @ T = 25 C 39 W D C o (Note 1a) T = 25 C 2.8 A o T = 25 C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics R Thermal Resistance, Junction-to- Case (Note 1) 3.2 C/W JC ° θ (Note 1b) R Thermal Resistance, Junction-to- Ambient 96 C/W JA ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5202P FDD5202P 13’’ 16mm 2500 1999 FDD5202P , Rev. A
