FDD4685 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 27mΩ at V = –10V, I = –8.4AThis P-Channel MOSFET has been produced usi ..
FDD4685 ,-40V P-Channel PowerTrench?MOSFET®FDD4685 40V P-Channel PowerTrench MOSFETOctober 2006FDD4685 ..
FDD4685_F085 ,P-Channel PowerTrench?MOSFET -40V, -32A, 35m?Features Typ r = 23mΩ at V = -10V, I = -8.4A InverterDS(on) GS D Typ r = 30mΩ ..
FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
FDD5612 ,60V N-Channel PowerTrench MOSFETFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronou ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD4685
-40V P-Channel PowerTrench?MOSFET
® FDD4685 40V P-Channel PowerTrench MOSFET October 2006 FDD4685 tm ® 40V P-Channel PowerTrench MOSFET –40V, –32A, 27mΩ Features General Description Max r = 27mΩ at V = –10V, I = –8.4A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to Max r = 35mΩ at V = –4.5V, I = –7A DS(on) GS D deliver low r and good switching characteristic offering DS(on) High performance trench technology for extremely low r superior performance in application. DS(on) RoHS Compliant Application Inverter Power Supplies S G D G S D-PAK TO-252 D (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage –40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous(Package Limited) T = 25°C –32 C -Continuous(Silicon Limited) T = 25°C (Note 1) –40 C I A D -Continuous T = 25°C (Note 1a) –8.4 A -Pulsed –100 E Drain-Source Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25°C 69 C P W D Power Dissipation (Note 1a) 3 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4685 FDD4685 D-PAK(TO-252) 13’’ 12mm 2500 units 1 ©2006 FDD4685 Rev.B
