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FDD4685_F085FAIRCHILN/a5000avaiP-Channel PowerTrench?MOSFET -40V, -32A, 35m?


FDD4685_F085 ,P-Channel PowerTrench?MOSFET -40V, -32A, 35m?Features„ Typ r = 23mΩ at V = -10V, I = -8.4A „ InverterDS(on) GS D„ Typ r = 30mΩ ..
FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description„ Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
FDD5612 ,60V N-Channel PowerTrench MOSFETFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronou ..
FDD5614 ,60V P-Channel PowerTrench MOSFETApplications• DC/DC converter • High performance trench technology for extremelylow RDS(ON)• Power ..
FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
FN1L4Z-T2B ,Compound transistorFEATURES ( PACKAGE DIMENSIONS ' I . I C in millimeters . tii'r O Resistor Built-in TYPE B 2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR

FDD4685_F085
P-Channel PowerTrench?MOSFET -40V, -32A, 35m?
® FDD4685_F085 P-Channel PowerTrench MOSFET December 2010 FDD4685_F085 ® P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Applications Features „ Typ r = 23mΩ at V = -10V, I = -8.4A „ Inverter DS(on) GS D „ Typ r = 30mΩ at V = -4.5V, I = -7A „ Power Supplies DS(on) GS D „ Typ Q = 19nC at V = -5V g(TOT) GS „ High performance trench technology for extremely low r DS(on) „ RoHS Compliant „ Qualified to AEC Q101 ©2010 1 FDD4685_F085 Rev. C
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