FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
FDD4685 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 27mΩ at V = –10V, I = –8.4AThis P-Channel MOSFET has been produced usi ..
FDD4685 ,-40V P-Channel PowerTrench?MOSFET®FDD4685 40V P-Channel PowerTrench MOSFETOctober 2006FDD4685 ..
FDD4685_F085 ,P-Channel PowerTrench?MOSFET -40V, -32A, 35m?Features Typ r = 23mΩ at V = -10V, I = -8.4A InverterDS(on) GS D Typ r = 30mΩ ..
FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FDD5353 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 12.3mΩ at V = 10V, I = 10.7A This N-Channel MOSFET is produced usi ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD45AN06LA0
60V N-Channel PowerTrench MOSFET
FDD45AN06LA0 February 2004 FDD45AN06LA0 ® N-Channel PowerTrench MOSFET 60V, 22A, 45mΩ Features Applications •r = 39mΩ (Typ.), V = 5V, I = 22A Motor / Body Load Control DS(ON) GS D Q (tot) = 8.3nC (Typ.), V = 5VABS Systems g GS Low Miller ChargePowertrain Management Low Q Body DiodeInjection Systems RR UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 83535 DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 25 A Continuous (T = 25 C, V = 10V) C GS o Continuous (T = 25 C, V = 5V) 22 A C GS I D o Continuous (T = 100 C, V = 5V) 16 A C GS o o Continuous (T = 25 C, V = 5V, R = 52 C/W) 5.2 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 15 mJ AS Power dissipation 55 W P D o o Derate above 25C0.37W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.73 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDD45AN06LA0 Rev. A
