FDD4243 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 44mΩ at V = -10V, I = -6.7AThis P-Channel MOSFET has been produced usi ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETapplications.DS(on) RoHS CompliantApplication Inverter Power SuppliesS DGGSD-PAKTO-252(TO-252)D ..
FDD4243_F085 ,40V P-Channel PowerTrench?MOSFETFeatures Typ r = 36mΩ at V = -10V, I = -6.7A InverterDS(on) GS D Typ r = 48mΩ ..
FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
FDD4685 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 27mΩ at V = –10V, I = –8.4AThis P-Channel MOSFET has been produced usi ..
FDD4685 ,-40V P-Channel PowerTrench?MOSFET®FDD4685 40V P-Channel PowerTrench MOSFETOctober 2006FDD4685 ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD4243
-40V P-Channel PowerTrench?MOSFET
® FDD4243 40V P-Channel PowerTrench MOSFET November 2007 FDD4243 ® 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description Max r = 44mΩ at V = -10V, I = -6.7A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to Max r = 64mΩ at V = -4.5V, I = -5.5A DS(on) GS D deliver low r and optimized Bvdss capability to offer DS(on) High performance trench technology for extremely low r superior performance benefit in the applications. DS(on) RoHS Compliant Application Inverter Power Supplies S D G G S D-PAK TO-252 (TO-252) D MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage -40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C -14 C -Continuous (Silicon limited) T = 25°C (Note 1) -24 C I A D -Continuous T = 25°C (Note 1a) -6.7 A -Pulsed -60 E Single Pulse Avalanche Energy (Note 3) 84 mJ AS Power Dissipation T = 25°C 42 C P W D Power Dissipation (Note 1a) 3 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4243 FDD4243 D-PAK(TO-252) 13’’ 12mm 2500 units 1 ©2007 FDD4243 Rev.C1
