FDD4243_F085 ,40V P-Channel PowerTrench?MOSFETFeatures Typ r = 36mΩ at V = -10V, I = -6.7A InverterDS(on) GS D Typ r = 48mΩ ..
FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
FDD4685 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 27mΩ at V = –10V, I = –8.4AThis P-Channel MOSFET has been produced usi ..
FDD4685 ,-40V P-Channel PowerTrench?MOSFET®FDD4685 40V P-Channel PowerTrench MOSFETOctober 2006FDD4685 ..
FDD4685_F085 ,P-Channel PowerTrench?MOSFET -40V, -32A, 35m?Features Typ r = 23mΩ at V = -10V, I = -8.4A InverterDS(on) GS D Typ r = 30mΩ ..
FDD5202P ,P-Channel/ Logic Level/ MOSFETApplications• DC/DC converter• Motor drives• L.D.O.SD GGSTO-252Do TA=25 C unless otherwise no ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD4243_F085
40V P-Channel PowerTrench?MOSFET
® FDD4243_F085 P-Channel PowerTrench MOSFET December 2010 FDD4243_F085 ® P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Applications Features Typ r = 36mΩ at V = -10V, I = -6.7A Inverter DS(on) GS D Typ r = 48mΩ at V = -4.5V, I = -5.5A Power Supplies DS(on) GS D Typ Q = 21nC at V = -10V g(TOT) GS High performance trench technology for extremely low r DS(on) RoHS Compliant Qualified to AEC Q101 ©2010 1 FDD4243_F085 Rev. C
