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FDD4141_F085FAIRCHILN/a5000avai-40V P-Channel PowerTrench?MOSFET

FDD4141_F085 ,-40V P-Channel PowerTrench?MOSFETApplications„ Inverter„ Power SuppliesSDGGSD-PAKTO-252D(TO-252)MOSFET Maximum Ratings T = 25°C unl ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETGeneral Description„ Max r = 44mΩ at V = -10V, I = -6.7AThis P-Channel MOSFET has been produced usi ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETapplications.DS(on) „ RoHS CompliantApplication„ Inverter„ Power SuppliesS DGGSD-PAKTO-252(TO-252)D ..
FDD4243_F085 ,40V P-Channel PowerTrench?MOSFETFeatures„ Typ r = 36mΩ at V = -10V, I = -6.7A „ InverterDS(on) GS D„ Typ r = 48mΩ ..
FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
FDD4685 ,-40V P-Channel PowerTrench?MOSFETGeneral Description„ Max r = 27mΩ at V = –10V, I = –8.4AThis P-Channel MOSFET has been produced usi ..
FN1L4M-T1B ,Compound transistorFEATURES PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE In millimeters C 28:02 B FO.1 R1 1T2 47 ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C) CHARACTERISTIC SYMBOL . . . TEST CONDITIONS ( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES ( PACKAGE DIMENSIONS ' I . I C in millimeters . tii'r O Resistor Built-in TYPE B 2.83c0 ..
FN1L4Z-T2B ,Compound transistorFEATURES ( PACKAGE DIMENSIONS ' I . I C in millimeters . tii'r O Resistor Built-in TYPE B 2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR

FDD4141_F085
-40V P-Channel PowerTrench?MOSFET
® FDD4141_F085 P-Channel PowerTrench MOSFET October 2010 FDD4141_F085 ® P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max r = 12.3mΩ at V = -10V, I = -12.7A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to „ Max r = 18.0mΩ at V = -4.5V, I = -10.4A DS(on) GS D deliver low r and optimized Bvdss capability to offer DS(on) „ High performance trench technology for extremely low r superior performance benefit in the applications. and optimized DS(on) switching performance capability reducing power dissipation „ Qualified to AEC Q101 losses in converter/inverter applications. „ RoHS Compliant Applications „ Inverter „ Power Supplies S D G G S D-PAK TO-252 D (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage -40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C -50 C -Continuous (Silicon limited) T = 25°C -58 C I A D -Continuous T = 25°C (Note 1a) -10.8 A -Pulsed -100 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25°C 69 C P W D Power Dissipation T = 25°C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Maximum Thermal Resistance, Junction to Case 1.8 θJC °C/W R Maximum Thermal Resistance, Junction to Ambient (Note 1a) 52 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4141 FDD4141_F085 D-PAK (TO-252) 13’’ 12mm 2500 units ©2010 1 FDD4141_F085 Rev.C

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