FDD3860 ,100V N-Channel PowerTrench?MOSFETApplications DC-AC Conversion Synchronous RectifierD DGGSD-PAKTO-252(TO-252)SMOSFET Maximum Ratin ..
FDD4141_F085 ,-40V P-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesSDGGSD-PAKTO-252D(TO-252)MOSFET Maximum Ratings T = 25°C unl ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 44mΩ at V = -10V, I = -6.7AThis P-Channel MOSFET has been produced usi ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETapplications.DS(on) RoHS CompliantApplication Inverter Power SuppliesS DGGSD-PAKTO-252(TO-252)D ..
FDD4243_F085 ,40V P-Channel PowerTrench?MOSFETFeatures Typ r = 36mΩ at V = -10V, I = -6.7A InverterDS(on) GS D Typ r = 48mΩ ..
FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN1L4Z-T2B ,Compound transistorFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FN4A4M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD3860
100V N-Channel PowerTrench?MOSFET
® FDD3860 N-Channel PowerTrench MOSFET October 2008 FDD3860 tm ® N-Channel PowerTrench MOSFET 100V, 29A, 36mΩ Features General Description Max r = 36mΩ at V = 10V, I = 5.9A This N-Channel MOSFET is rugged gate version of Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process. This part is High performance trench technology for extremely low r DS(on) tailored for low r and low Qg figure of merit, with avalanche DS(on) 100% UIL tested ruggedness for a wide range of switching applications. RoHS Compliant Applications DC-AC Conversion Synchronous Rectifier D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Silicon limited) T = 25°C 29 C I -Continuous T = 25°C (Note 1a) 6.2 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25°C 69 C P W D Power Dissipation T = 25°C (Note 1a) 3.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3860 FDD3860 D-PAK (TO-252) 13’’ 12mm 2500 units 1 ©2008 FDD3860 Rev.C1
