FDD3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmFDD3682June 2002FDD3682®N-Channel UltraFET Trench MOSFET100V, 32A, 36mΩ
FDD3706 ,20V N-Channel PowerTrench MOSFETFDD3706/FDU3706FDD3706/FDU3706® ®PowerTrenchThis N-Channel MOSFET has been designed• 50 A, 20 VR = ..
FDD3860 ,100V N-Channel PowerTrench?MOSFETApplications DC-AC Conversion Synchronous RectifierD DGGSD-PAKTO-252(TO-252)SMOSFET Maximum Ratin ..
FDD4141_F085 ,-40V P-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesSDGGSD-PAKTO-252D(TO-252)MOSFET Maximum Ratings T = 25°C unl ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 44mΩ at V = -10V, I = -6.7AThis P-Channel MOSFET has been produced usi ..
FDD4243 ,-40V P-Channel PowerTrench?MOSFETapplications.DS(on) RoHS CompliantApplication Inverter Power SuppliesS DGGSD-PAKTO-252(TO-252)D ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
FN1L4M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
( PACKAGE DIMENSIONS ' I . I C
in millimeters . tii'r O Resistor Built-in TYPE B
2.83c0 ..
FDD3682
N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhm
FDD3682 June 2002 FDD3682 ® N-Channel UltraFET Trench MOSFET 100V, 32A, 36mΩ Features Applications r = 32mΩ (Typ.), V = 10V, I = 32ADC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 18.5nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82755 Electronic Valve Train System DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 32 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 23 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 5.5 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 55 mJ AS Power dissipation 95 W P D o o Derate above 25C0.63W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 1.58 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDD3682 Rev. A
