FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD3672 ,N-Channel UltraFET ?Trench MOSFET 100V, 44A, 28mOhmFDD3672June 2002FDD3672®N-Channel UltraFET Trench MOSFET100V, 44A, 28mΩ
FDD3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmFDD3682June 2002FDD3682®N-Channel UltraFET Trench MOSFET100V, 32A, 36mΩ
FDD3706 ,20V N-Channel PowerTrench MOSFETFDD3706/FDU3706FDD3706/FDU3706® ®PowerTrenchThis N-Channel MOSFET has been designed• 50 A, 20 VR = ..
FDD3860 ,100V N-Channel PowerTrench?MOSFETApplications DC-AC Conversion Synchronous RectifierD DGGSD-PAKTO-252(TO-252)SMOSFET Maximum Ratin ..
FDD4141_F085 ,-40V P-Channel PowerTrench?MOSFETApplications Inverter Power SuppliesSDGGSD-PAKTO-252D(TO-252)MOSFET Maximum Ratings T = 25°C unl ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
FDD3670
100V N-Channel PowerTrench MOSFET
FDD3670 June 2001 FDD3670 Ò Ò 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 34 A, 100 V. R = 32 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 mW @ V GS = 6 V converters using either synchronous or conventional switching PWM controllers. · Low gate charge (57 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · Fast switching speed RDS(ON) specifications. · High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low RDS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. · High power and current handling capability D D G G S TO-252 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1) 34 A D Drain Current – Pulsed 100 PD Maximum Power Dissipation @ T = 25°C (Note 1) 83 W C 3.8 @ T = 25°C (Note 1a) A 1.6 @ T = 25°C (Note 1b) A T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 RqJC °C/W R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3670 FDD3670 13’’ 16mm 2500 units Ó2001 FDD3670 Rev C(W)
