FDD3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD3672 ,N-Channel UltraFET ?Trench MOSFET 100V, 44A, 28mOhmFDD3672June 2002FDD3672®N-Channel UltraFET Trench MOSFET100V, 44A, 28mΩ
FDD3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmFDD3682June 2002FDD3682®N-Channel UltraFET Trench MOSFET100V, 32A, 36mΩ
FDD3706 ,20V N-Channel PowerTrench MOSFETFDD3706/FDU3706FDD3706/FDU3706® ®PowerTrenchThis N-Channel MOSFET has been designed• 50 A, 20 VR = ..
FDD3860 ,100V N-Channel PowerTrench?MOSFETApplications DC-AC Conversion Synchronous RectifierD DGGSD-PAKTO-252(TO-252)SMOSFET Maximum Ratin ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FN1L4M-T1B ,Compound transistorFEATURES
PAcKA.GE..PMFNsiONs . Resistors Built-in TYPE
In millimeters
C
28:02 B
FO.1 R1 1T2 47 ..
FDD3580
80V N-Channel PowerTrench MOSFET
FDD3580/FDU3580 August 2001 FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 7.7 A, 80 V. R = 29 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 33 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge (34nC typical) This MOSFET features faster switching and lower gate change than other MOSFETs with comparable R • Fast switching speed DS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low R DS(ON) • High power and current handling capability D D D G G I-PAK G S S D-PAK (TO-251AA) D-PAK TO-252 TO-252 G DS (TO-252) (TO- S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage V GSS ± 20 I Maximum Drain Current-Continuous (Note 1a) 7.7 A D Maximum Drain Current – Pulsed 50 o P Maximum Power Dissipation @T = 25 C (Note 1) 42 W D C o T = 25 C (Note 1a) 3.8 A o T = 25 C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range −55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to- Case (Note 1) 3.5 R °C/W θJC R Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3580 FDD3580 13’’ 16mm 2500 FDU3580 FDU3580 Tube N/A 75 2001 FDD3580/FDU3580 Rev A1(W)
