FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDD3570 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable RDS(ON) • High pe ..
FDD3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD3672 ,N-Channel UltraFET ?Trench MOSFET 100V, 44A, 28mOhmFDD3672June 2002FDD3672®N-Channel UltraFET Trench MOSFET100V, 44A, 28mΩ
FDD3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmFDD3682June 2002FDD3682®N-Channel UltraFET Trench MOSFET100V, 32A, 36mΩ
FN1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS(T8=25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
( Collector C ..
FDD3510H
80V Dual N & P-Channel PowerTrench?MOSFET
® FDD3510H Dual N & P-Channel PowerTrench MOSFET April 2008 FDD3510H ® Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s Max r = 80mΩ at V = 10V, I = 4.3A DS(on) GS D ® advanced PowerTrench process that has been especially Max r = 88mΩ at V = 6V, I = 4.1A DS(on) GS D tailored to minimize on-state resistance and yet maintain superior switching performance. Q2: P-Channel Max r = 190mΩ at V = -10V, I = -2.8A DS(on) GS D Applications Max r = 224mΩ at V = -4.5V, I = -2.6A DS(on) GS D Inverter 100% UIL Tested H-Bridge RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 S1 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 80 -80 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current - Continuous T = 25°C 13.9 -9.4 C I - Continuous T = 25°C 4.3 -2.8 A D A - Pulsed 20 -10 Power Dissipation for Single Operation T = 25°C (Note 1) 35 32 C P T = 25°C (Note 1a) 3.1 W D A T = 25°C (Note 1b) 1.3 A E Single Pulse Avalanche Energy (Note 3) 37 54 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 3.5 θJC °C/W R Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.9 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3510H FDD3510H TO-252-4L 13” 12mm 2500 units 1 ©2008 FDD3510H Rev.C
