FDD26AN06A0 ,60V N-Channel PowerTrench MOSFET 60V, 36A, 26mOApplications•r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 13n ..
FDD306P ,-12V P-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionDS(ON) GS Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchild ..
FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDD3570 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable RDS(ON) • High pe ..
FDD3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FN1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T1B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T2B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FDD26AN06A0
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
FDD26AN06A0 August 2004 FDD26AN06A0 ® N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications •r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load Control DS(ON) GS D Q (tot) = 13nC (Typ.), V = 10V ABS Systems g GS Low Miller Charge Powertrain Management Low Q Body Diode Injection Systems RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82544 DRAIN D (FLANGE) GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 36 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 25 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 7 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy ( Note 1) 35 mJ AS Power dissipation 75 W P D o o Derate above 25C0.5W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDD26AN06A0 Rev. A
