FDD2612 ,200V N-Channel PowerTrench MOSFETApplications• Fast switching speed• DC/DC converter• Low gate charge (8nC typical)DDGGSTO-252SoAbso ..
FDD26AN06A0 ,60V N-Channel PowerTrench MOSFET 60V, 36A, 26mOApplications•r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 13n ..
FDD306P ,-12V P-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionDS(ON) GS Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchild ..
FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDD3570 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable RDS(ON) • High pe ..
FDD3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T1B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T2B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
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-0.15 C ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FDD2612
200V N-Channel PowerTrench MOSFET
FDD2612 August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.9 A, 200 V. R = 720 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) low gate charge, low R and fast switching speed. DS(ON) • High power and current handling capability Applications • Fast switching speed • DC/DC converter • Low gate charge (8nC typical) D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage ± 20 V GSS ID Drain Current – Continuous (Note 1a) 4.9 A – Pulsed 10 P Power Dissipation (Note 1) 42 W D (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range J STG −55 to +175 °C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2612 FDD2612 13’’ 16mm 2500 units 2001 FDD2612 Rev B1 (W)
