FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmApplicationsr = 58mΩ (Typ.), V = 10V, I = 7A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmFDD2582September 2002FDD2582®N-Channel PowerTrench MOSFET150V, 21A, 66mΩ
FDD2612 ,200V N-Channel PowerTrench MOSFETApplications• Fast switching speed• DC/DC converter• Low gate charge (8nC typical)DDGGSTO-252SoAbso ..
FDD26AN06A0 ,60V N-Channel PowerTrench MOSFET 60V, 36A, 26mOApplications•r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 13n ..
FDD306P ,-12V P-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionDS(ON) GS Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchild ..
FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T1B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T2B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FDD2582
N-Channel PowerTrench MOSFET 150V, 21A, 0.066 Ohm
FDD2582 September 2002 FDD2582 ® N-Channel PowerTrench MOSFET 150V, 21A, 66mΩ Features Applications r = 58mΩ (Typ.), V = 10V, I = 7ADC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 19nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82855 Electronic Valve Train System DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 21 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 100 C, V = 10V) 15 C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 3.7 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 59 mJ AS Power dissipation 95 W P D o o Derate above 25C0.63W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 1.58 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDD2582 Rev. B
