FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDD2572 / FDU2572July 2002FDD2572 / FDU2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?®FDD2572_F085 N-Channel PowerTrench MOSFET ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?Applicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmApplicationsr = 58mΩ (Typ.), V = 10V, I = 7A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmFDD2582September 2002FDD2582®N-Channel PowerTrench MOSFET150V, 21A, 66mΩ
FN1F4N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
_ CHARACTERISTIC SYMBOL MIN. 4 TYP. MAX. UNIT TEST CONDI ..
FN1F4N-T2B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
RI=22k?
R2 =47 kf2
R2 E
o Complementary to FA1F4N
..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FDD2572
N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhm
FDD2572 / FDU2572 July 2002 FDD2572 / FDU2572 ® N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications r = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 26nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection System Qualified to AEC Q101 42V Automotive Load Control Formerly developmental type 82860 Electronic Valve Train System DRAIN D SOURCE (FLANGE) DRAIN DRAIN GATE (FLANGE) GATE G SOURCE TO-252AA TO-251AA FDD SERIES FDU SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 29 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 20 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 4 amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 36 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-251, TO-252 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-251, TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDD2572 / FDU2572 Rev. A2
