FDD2512 ,150V N-Channel PowerTrench TM MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.7 A, 150 V R = 420 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDD2570 ,150V N-Channel PowerTrench TM MOSFETFeaturesThis N-Channel MOSFET has been designed• 4.7 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDD2572 / FDU2572July 2002FDD2572 / FDU2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?®FDD2572_F085 N-Channel PowerTrench MOSFET ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?Applicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FN1F4N , MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
FN1F4N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
_ CHARACTERISTIC SYMBOL MIN. 4 TYP. MAX. UNIT TEST CONDI ..
FN1F4N-T2B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
RI=22k?
R2 =47 kf2
R2 E
o Complementary to FA1F4N
..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FDD2512
150V N-Channel PowerTrench TM MOSFET
FDD2512 August 2001 FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 6.7 A, 150 V R = 420 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 470 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature • Low gate charge (8nC typical) faster switching and lower gate charge than other specifications. The MOSFETs with comparable RDS(ON) • Fast switching result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low R DS(ON) . D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 150 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 3) 6.7 A D – Pulsed (Note 1a) 20 P W D Power Dissipation (Note 1) 42 (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range −55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2512 FDD2512 13’’ 16mm 2500 units 2001 FDD2512 Rev B2(W)
