FDD24AN06LA0 ,60V N-Channel Logic Level PowerTrench MOSFETApplications•r = 20mΩ (Typ.), V = 5V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 16nC ..
FDD2512 ,150V N-Channel PowerTrench TM MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.7 A, 150 V R = 420 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDD2570 ,150V N-Channel PowerTrench TM MOSFETFeaturesThis N-Channel MOSFET has been designed• 4.7 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDD2572 / FDU2572July 2002FDD2572 / FDU2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?®FDD2572_F085 N-Channel PowerTrench MOSFET ..
FN1F4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector Cu ..
FN1F4N , MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
FN1F4N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
_ CHARACTERISTIC SYMBOL MIN. 4 TYP. MAX. UNIT TEST CONDI ..
FN1F4N-T2B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
RI=22k?
R2 =47 kf2
R2 E
o Complementary to FA1F4N
..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FDD24AN06LA0
60V N-Channel Logic Level PowerTrench MOSFET
FDD24AN06LA0 February 2004 FDD24AN06LA0 ® N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications •r = 20mΩ (Typ.), V = 5V, I = 36A Motor / Body Load Control DS(ON) GS D Q (tot) = 16nC (Typ.), V = 5VABS Systems g GS Low Miller ChargePowertrain Management Low Q Body DiodeInjection Systems RR UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 83547 DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 40 A Continuous (T = 25 C, V = 10V) C GS o Continuous (T = 25 C, V = 5V) 36 A C GS I D o Continuous (T = 100 C, V = 5V) 25 A C GS o o Continuous (T = 25 C, V = 5V, R = 52 C/W) 7.1 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 32 mJ AS Power dissipation 75 W P D o o Derate above 25C0.5W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDD24AN06LA0 Rev. A1
