FDD10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhmFDD10AN06A0August 2002FDD10AN06A0®N-Channel PowerTrench MOSFET60V, 50A, 10.5mΩ
FDD10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhmApplications•r = 9.4mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDD120AN15A0 ,N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 OhmsApplications•r = 101mΩ (Typ.), V = 10V, I = 4A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDD13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135Applications•r = 11.5mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FDD14AN06LA0 ,N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhmsApplications•r = 12.8mΩ (Typ.), V = 5V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 25 ..
FDD16AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhmApplications•r = 13mΩ (Typ.), V = 10V, I = 50A 42V Automotive Load ControlDS(ON) GS DQ (tot) = 3 ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FN1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4P-T1B ,Compound transistorFEATURES
PAcKAfE.PPiiNsioNs __' o Resistors Built-in TYPE
m millimeters
c
2.8K0.2 2 f B -
0. ..
FN1A4P-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FN1A4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FDD10AN06A0
N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhm
FDD10AN06A0 August 2002 FDD10AN06A0 ® N-Channel PowerTrench MOSFET 60V, 50A, 10.5mΩ Features Applications •r = 9.4mΩ (Typ.), V = 10V, I = 50A Motor / Body Load Control DS(ON) GS D Q (tot) = 28nC (Typ.), V = 10VABS Systems g GS Low Miller ChargePowertrain Management Low Qrr Body DiodeInjection Systems UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82560 DRAIN (FLANGE) D GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 50 A Continuous (T < 115 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 52 C/W) 11 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 429 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDD10AN06A0 Rev. A
