FDD068AN03L ,N-Channel PowerTrench MOSFETApplications•r = 5.7mΩ (Typ.), V = 4.5V, I = 35A 12V Automotive Load ControlDS(ON) GS DQ = 24nC ..
FDD107AN06LA0 ,60V N-Channel PowerTrench MOSFETApplications•r = 92mΩ (Typ.), V = 5V, I = 10A Motor / Body Load ControlDS(ON) GS DQ (tot) = 4.2n ..
FDD10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhmFDD10AN06A0August 2002FDD10AN06A0®N-Channel PowerTrench MOSFET60V, 50A, 10.5mΩ
FDD10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhmApplications•r = 9.4mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDD120AN15A0 ,N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 OhmsApplications•r = 101mΩ (Typ.), V = 10V, I = 4A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDD13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135Applications•r = 11.5mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FN1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4P-T1B ,Compound transistorFEATURES
PAcKAfE.PPiiNsioNs __' o Resistors Built-in TYPE
m millimeters
c
2.8K0.2 2 f B -
0. ..
FN1A4P-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 CC)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
. Collect ..
FDD068AN03L-FDU068AN03L
N-Channel PowerTrench MOSFET
FDD068AN03L / FDU068AN03L December 2003 FDD068AN03L / FDU068AN03L ® N-Channel PowerTrench MOSFET 30V, 35A, 6.8mΩ Features Applications •r = 5.7mΩ (Typ.), V = 4.5V, I = 35A 12V Automotive Load Control DS(ON) GS D Q = 24nC (Typ.), V = 5V Starter / Alternator Systems g(5) GS Low Miller Charge Electronic Power Steering Systems Low Q Body Diode ABS RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters Qualified to AEC Q101 D D G I-PAK G S (TO-251AA) D-PAK TO-252 S G DS (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 35 A Continuous (T < 154 C, V = 10V) C GS o I Continuous (T < 150 C, V = 4.5V) 35 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 52 C/W) 17 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 168 mJ AS Power dissipation 80 W P D o o Derate above 25C0.53W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252, TO-251 1.88 C/W θJC o R Thermal Resistance Junction to Ambient TO-252, TO-251 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 FDD068AN03L / FDU068AN03L Rev. B1
