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FDC855NFAIN/a33000avai30V Single N-Channel, Logic Level, PowerTrench?MOSFET
FDC855NFAIRCHILDN/a12000avai30V Single N-Channel, Logic Level, PowerTrench?MOSFET


FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications where in-line power standard SO-8; low profile (1mm thick).loss is critical.„ RoHS Com ..
FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications. Utilizing Fairchild ®„ Max r = 36mΩ at V = 4.5V, I = 5.3ADS(on) GS D Semiconductor’s ..
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FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET SILICON TRANSISTOR FN1A30. ttatc ELECTRON DEVICE, MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET SILICON TRANSISTOR FN1A30. ttatc ELECTRON DEVICE, MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c) CHARACTiiRISTlC SYMBOL TEST CONDITIONS Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FN1A4M-T2B ,Compound transistorFEATURES PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE in millimeters _ C 2.8k0.2 B l, _ . ..


FDC855N
30V Single N-Channel, Logic Level, PowerTrench?MOSFET
® FDC855N N-Channel, Logic Level, PowerTrench MOSFET January 2008 FDC855N tm ® Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mΩ Features General Description „ Max r = 27mΩ at V = 10V, I = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for DS(on) GS D low voltage and battery powered applications. Utilizing Fairchild ® „ Max r = 36mΩ at V = 4.5V, I = 5.3A DS(on) GS D Semiconductor’s advanced PowerTrench process, this device possesses minimized on-state resistance to optimize the power TM „ SuperSOT -6 package: small footprint (72% smaller than consumption. They are ideal for applications where in-line power standard SO-8; low profile (1mm thick). loss is critical. „ RoHS Compliant Application „ Power Management in Notebook, Hard Disk Drive S D D D D D D TM SuperSOT -6 G D S G D Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C (Note 1a) 6.1 A I A D -Pulsed 20 Power Dissipation (Steady State) (Note 1a) 1.6 P W D Power Dissipation (Steady State) (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 30 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .855 FDC855N SuperSOT-6 7” 8 mm 3000 units 1 ©2008 FDC855N Rev.C
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