FDC658P_NL ,Single P-Channel Logic Level PowerTrench MOSFETGeneral Description MOSFET Logic Level,8P DC65 (TAV µ A Vo oI C CΔ ..
FDC6901L ,Integrated Load SwitchApplications • Load switch • Power management D2S1D1G2S2TMSuperSOT -6G1Pin 1SuperSOT™-6 ..
FDC6901L ,Integrated Load SwitchFeatures This device is particularly suited for compact power • Three programmable slew rates man ..
FDC6901L ,Integrated Load Switchapplications with high capacitance loads. For turn-off, the IC pulls the MOSFET gate up quickly.
FDC697P ,P-Channel 1.8V PowerTrench MOSFETApplications low R DS(ON)• Fast switching speed • Battery management • Load Switch • FLMP SuperSOT ..
FDC699P ,P-Channel 2.5V Power Mosfet MOSFETApplications • FLMP SuperSOT-6 package: Enhanced thermal • Battery management performance in indus ..
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTiiRISTlC
SYMBOL
TEST CONDITIONS
Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FDC658P_NL
Single P-Channel Logic Level PowerTrench MOSFET
THERMAL CHARACTERISTICS
