FDC655AN_NL ,Single N-Channel Logic Level PowerTrench MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC655BN ,Single N-Channel, Logic Level, PowerTrench MOSFETGeneral Description 6.3 A, 30 V. This N-Channel Logic Level MOSFET is produced using Fair-R = 25 mΩ ..
FDC6561 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETGeneral Description MOSFET Logic Level DC6561AN (TAV µ A Vo oI C ..
FDC6561AN ,Dual N-Channel Logic Level PowerTrench TM MOSFETGeneral Description MOSFET Logic Level DC6561AN (TAV µ A Vo oI C ..
FDC658AP ,-30V Single P-Channel Logic Level PowerTrench?MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using Max r = 50 m @ V = -10 V, I = -4AF ..
FDC658P ,Single P-Channel, Logic Level, PowerTrench TM MOSFETGeneral Description MOSFET Logic Level,8P DC65 (TAV µ A Vo oI C CΔ ..
FMX-G16S , Ultra-Fast-Recovery Rectifier Diodes
FMX-G22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-G26S , Ultra-Fast-Recovery Rectifier Diodes
FMY3A , Power Management(Dual Transistors)
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FMY4A , Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
FDC655AN_NL
Single N-Channel Logic Level PowerTrench MOSFET
June 1998 FDC655AN TM Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using 6.3 A, 30 V. R = 0.027 W @ V = 10 V DS(ON) GS Fairchild Semiconductor's advanced PowerTrench process R = 0.035 W @ V = 4.5 V. DS(ON) GS that has been especially tailored to minimize on-state Fast switching. resistance and yet maintain superior switching performance. Low gate charge ( typical 9 nC). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast TM SuperSOT -6 package: small footprint (72% smaller than switching are required. SO-8); low profile (1mm thick); pin compatible with TSOP-6. TM TM SOT-223 SOIC-16 SuperSOT -6 SuperSOT -8 SO-8 SOT-23 S 1 6 D D 2 5 G 3 3 4 D pin 1 TM D SuperSOT -6 Absolute Maximum Ratings T = 25°C unless otherwise note A Symbol Parameter FDC655AN Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous ±20 V GSS I Drain Current - Continuous (Note 1a) 6.3 A D - Pulsed 20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC FDC655AN Rev.C © 1998 .55A
