FDC654P ,Single P-Channel Logic Level PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –3.6 A, –30 V. R = 75 mΩ @ V = –10 V DS(O ..
FDC655AN ,Single N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using 6.3 A, 30 V. R = 0.027 Ω @ V = ..
FDC655AN_NL ,Single N-Channel Logic Level PowerTrench MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC655BN ,Single N-Channel, Logic Level, PowerTrench MOSFETGeneral Description 6.3 A, 30 V. This N-Channel Logic Level MOSFET is produced using Fair-R = 25 mΩ ..
FDC6561 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETGeneral Description MOSFET Logic Level DC6561AN (TAV µ A Vo oI C ..
FDC6561AN ,Dual N-Channel Logic Level PowerTrench TM MOSFETGeneral Description MOSFET Logic Level DC6561AN (TAV µ A Vo oI C ..
FMXA-1106S , Ultrafast Recovery Diode
FMXA-4203S , Ultrafast Recovery Diode
FMX-G12S , ULTRA-FAST-RECOVERY RECTIFIER DIODES
FMX-G14S , Ultra-Fast-Recovery Rectifier Diodes
FMX-G14S , Ultra-Fast-Recovery Rectifier Diodes
FMX-G16S , Ultra-Fast-Recovery Rectifier Diodes
FDC654P
Single P-Channel Logic Level PowerTrench MOSFET
FDC654P May 2002 FDC654P Ò Ò Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced · –3.6 A, –30 V. R = 75 mW @ V = –10 V DS(ON) GS using Fairchild’s advanced PowerTrench process. It R = 125 mW @ V = –4.5 V DS(ON) GS has been optimized for battery power management applications. · Low gate charge (6.2 nC typical) Applications · High performance trench technology for extremely low R DS(ON) · Battery management · Load switch · Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –3.6 A D – Pulsed –10 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 RqJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .654 FDC654P 7’’ 8mm 3000 units Ó2002 FDC654P Rev E (W)
