FDC6506P ,Dual P-Channel Logic Level PowerTrench MOSFETGeneral DescriptionThese P-Channel logic level MOSFETs are produced using • -1.8 A, -30 V. R = 0.17 ..
FDC653 ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC653N ,N-Channel Enhancement Mode Field Effect TransistorNovember 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor
FDC653N_NL ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC654P ,Single P-Channel Logic Level PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –3.6 A, –30 V. R = 75 mΩ @ V = –10 V DS(O ..
FDC655AN ,Single N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using 6.3 A, 30 V. R = 0.027 Ω @ V = ..
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FMX-32S , Ultra-Fast-Recovery Rectifier Diodes
FMX-32S , Ultra-Fast-Recovery Rectifier Diodes
FDC6506P
Dual P-Channel Logic Level PowerTrench MOSFET
FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET Features General Description These P-Channel logic level MOSFETs are produced using • -1.8 A, -30 V. R = 0.170 Ω @ V = -10 V DS(on) GS Fairchild Semiconductor's advanced PowerTrench R = 0.280 Ω @ V = -4.5 V DS(on) GS process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for • Low gate charge (2.3nC typical). superior switching performance. • Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications • High performance trench technology for extremely where the bigger more expensive SO-8 and TSSOP-8 low R . DS(ON) packages are impractical. TM • SuperSOT -6 package: small footprint (72% smaller Applications than standard SO-8); low profile (1mm thick). • Load switch • Battery protection • Power management D2 S1 3 4 D1 5 2 G2 S2 TM 6 1 SuperSOT -6 G1 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage 20 V GSS ± (Note 1a) ID Drain Current - Continuous -1.8 A - Pulsed -10 (Note 1a) P Power Dissipation for Single Operation 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 130 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 60 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDC6506P 7’’ 8mm 3000 units .506 1999 FDC6506P Rev. C
