FDC645N_NL ,N-Channel PowerTrench MOSFETApplications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling ..
FDC6506 ,Dual P-Channel Logic Level PowerTrench MOSFETApplications than standard SO-8); low profile (1mm thick).• Load switch• Battery protection• P ..
FDC6506P ,Dual P-Channel Logic Level PowerTrench MOSFETGeneral DescriptionThese P-Channel logic level MOSFETs are produced using • -1.8 A, -30 V. R = 0.17 ..
FDC653 ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC653N ,N-Channel Enhancement Mode Field Effect TransistorNovember 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor
FDC653N_NL ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FMX-32S , Ultra-Fast-Recovery Rectifier Diodes
FMX-32S , Ultra-Fast-Recovery Rectifier Diodes
FDC645N_NL
N-Channel PowerTrench MOSFET
FDC645N April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 5.5 A, 30 V. R = 30 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 26 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling capability S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 5.5 A D – Pulsed 20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics (Note 1a) 78 R Thermal Resistance, Junction-to-Ambient °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 30 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .645 FDC645N 7’’ 8mm 3000 units FDC645N Rev C(W) 2000
