FDC640P ,P-Channel 2.5V PowerTrench Specified MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –4.5 A, –20 V R = 0.053 Ω @ V = –4.5 V ..
FDC640P_NL ,P-Channel 2.5V PowerTrench Specified MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –4.5 A, –20 V R = 0.053 Ω @ V = –4.5 V ..
FDC6420C ,20V N & P-Channel PowerTrench MOSFETsFDC6420CFDC6420C® ®PowerTrench These N & P-Channel MOSFETs are produced using• 3.0 A, 20V.R = 70 ..
FDC642P ,P-Channel 2.5V Specified PowerTrench TM MOSFET -3 ..
FDC6432SH ,12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Q Min ..
FDC645 ,N-Channel PowerTrench MOSFETApplications• Low gate charge (13 nC typical)• DC/DC converter• High power and current handling cap ..
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-2203 , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FDC640P
P-Channel 2.5V PowerTrench Specified MOSFET
FDC640P January 2001 FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged • –4.5 A, –20 V R = 0.053 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild’s advanced PowerTrench R = 0.080 Ω @ V = –2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage • Rugged gate rating (±12V) (2.5V – 12V). • Fast switching speed Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) –4.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 30 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .640 FDC640P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor International FDC640P Rev E(W)
