FDC638P_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFETapplications: load switching and power management, low R DS(ON)battery charging circuits, and DC/DC ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast • Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET w ..
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplicationsON)DS(nC)GSDS(ON)GSDS(ON)
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchOctober 2001FDC6401N
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFDC6401NFDC6401N® ®Dual N-Channel 2.5V Specified This Dual N-Channel MOSFET has been designed• 3.0 ..
FMW-24H , Schottky Barrier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-2203 , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FDC638P_NL
Single P-Channel 2.5V Specified PowerTrench MOSFET
FDC638P September 2001 FDC638P Ò Ò P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced · –4.5 A, –20 V. R = 48 mW @ V = –4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced RDS(ON) = 65 mW @ V GS = –2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Low gate charge (10 nC typical) low gate charge for superior switching performance These devices are well suited for battery power · High performance trench technology for extremely applications: load switching and power management, low R DS(ON) battery charging circuits, and DC/DC conversion. · SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) S D 1 6 D 5 2 TM G SuperSOT -6 D pin 1 D 3 3 4 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –4.5 A D – Pulsed –20 P Power Dissipation for Single Operation (Note 1a) 1.6 D W (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 qJA °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 30 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .638 FDC638P 7’’ 8mm 3000 units Ó2001 FDC638P Rev F1 (W)
