FDC638APZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETGeneral Description Max r = 43mΩ at V = –4.5V, I = –4.5AThis P-Channel 2.5V specified MOSFET is pr ..
FDC638P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P -Channel 2.5V specified MOSFET is produced • –4.5 A, –20 V. R = 48 mΩ @ V = –4.5 V ..
FDC638P_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFETapplications: load switching and power management, low R DS(ON)battery charging circuits, and DC/DC ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast • Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET w ..
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplicationsON)DS(nC)GSDS(ON)GSDS(ON)
FMW-24H , Schottky Barrier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-2203 , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FDC638APZ
-20V P-Channel 2.5V PowerTrench?Specified MOSFET
® FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET December 2006 FDC638APZ ® P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description Max r = 43mΩ at V = –4.5V, I = –4.5A This P-Channel 2.5V specified MOSFET is produced using DS(on) GS D ® Fairchild Semiconductor’s advanced PowerTrench process Max r = 68mΩ at V = –2.5V, I = –3.8A DS(on) GS D that has been especially tailored to minimize the on-state Low gate charge (8nC typical). resistance and yet maintain low gate charge for superior switching performance High performance trench technology for extremely low r DS(on). These devices are well suited for battery power applications:load TM SuperSOT –6 package:small footprint (72% smaller than switching and power management,battery charging circuits,and standard SO–8) low profile (1mm thick). DC/DC conversion. RoHS Compliant Application DC - DC Conversion S D D D 1 6 D D D 5 2 G D S D G 3 4 Pin 1 3 TM SuperSOT -6 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –20 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous (Note 1a) –4.5 I A D -Pulsed –20 Power Dissipation (Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 156 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .638Z FDC638APZ 7’’ 8mm 3000 units 1 ©2006 FDC638APZ Rev.B
