FDC637BNZ ,20V N-Channel 2.5V Specified PowerTrench?MOSFETGeneral Description Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is pro ..
FDC638APZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETGeneral Description Max r = 43mΩ at V = –4.5V, I = –4.5AThis P-Channel 2.5V specified MOSFET is pr ..
FDC638P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P -Channel 2.5V specified MOSFET is produced • –4.5 A, –20 V. R = 48 mΩ @ V = –4.5 V ..
FDC638P_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFETapplications: load switching and power management, low R DS(ON)battery charging circuits, and DC/DC ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast • Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET w ..
FMW-24H , Schottky Barrier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-2203 , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FDC637BNZ
20V N-Channel 2.5V Specified PowerTrench?MOSFET
® FDC637BNZ N-Channel 2.5V Specified PowerTrench MOSFET September 2007 FDC637BNZ tm ® N-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mΩ Features General Description Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is produced using DS(on) GS D ® Fairchild Semiconductor’s advanced PowerTrench process Max r = 32mΩ at V = 2.5V, I = 5.2A DS(on) GS D that has been especially tailored to minimize the on-state Fast switching speed resistance and yet maintain low gate charge for superior switching performance. Low gate charge (8nC typical) These devices have been designed to offer exceptional power High performance trench technology for extremely low r DS(on) dissipation in a very small footprint compared with bigger SO-8 SuperSOT™–6 package: small footprint (72% smaller than and TSSOP-8 packages. standard SO-8; low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Applications Manufactured using green packaging material DC - DC Conversion Halide-Free Load switch RoHS Compliant Battery Protection S D D 1 6 D D D 2 5 D G D G 3 S 4 D Pin 1 TM SuperSOT -6 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous T = 25°C (Note 1a) 6.2 A I A D -Pulsed 20 Power Dissipation T = 25°C (Note 1a) 1.6 A P W D Power Dissipation T = 25°C (Note 1b) 0.8 A T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 156 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .637Z FDC637BNZ SSOT6 7’’ 8mm 3000 units 1 ©2007 FDC637BNZ Rev.C
