FDC634P_NL ,P-Channel 2.5V Specified PowerTrench®, MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Battery management • ..
FDC636P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC637AN ,Single N-Channel, 2.5V Specified PowerTrench TM MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. R = 0.024 Ω @ V = 4.5 Vusing ..
FDC637BNZ ,20V N-Channel 2.5V Specified PowerTrench?MOSFETGeneral Description Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is pro ..
FDC638APZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETGeneral Description Max r = 43mΩ at V = –4.5V, I = –4.5AThis P-Channel 2.5V specified MOSFET is pr ..
FDC638P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P -Channel 2.5V specified MOSFET is produced • –4.5 A, –20 V. R = 48 mΩ @ V = –4.5 V ..
FMV13N60ES , N-CHANNEL SILICON POWER MOSFET
FMV16N60ES , N-CHANNEL SILICON POWER MOSFET
FMV19N60ES , N-CHANNEL SILICON POWER MOSFET
FMV-3FU , Damper Diode (Diode modulation for TV)
FMV-3GU , Damper Diode (Diode modulation for TV)
FMV-3GU , Damper Diode (Diode modulation for TV)
FDC634P_NL
P-Channel 2.5V Specified PowerTrench®, MOSFET
FDC634P September 2001 FDC634P Ò Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses · –3.5 A, –20 V. R = 80 mW @ V = –4.5 V DS(ON) GS Fairchild’s low voltage PowerTrench process. It has R = 110 mW @ V = –2.5 V DS(ON) GS been optimized for battery power management applications. · Low gate charge (7.2 nC typical) Applications · High performance trench technology for extremely low R DS(ON) · Battery management · Load switch · Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –3.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 RqJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .634 FDC634P 7’’ 8mm 3000 units Ó2001 FDC634P Rev E (W)
