FDC6333C_NL ,30V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise notedAMinTypUnitsV = 0 V, I = 250 μADDrai ..
FDC633N ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThis N-Channel enhancement mode power field effect5.2 A, 30 V. R = 0.042 Ω @ V = 4.5 V ..
FDC633N_NL ,30V N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC634 ,P-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC634P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses • –3.5 A, –20 V. R = 80 mΩ @ V = –4.5 V DS(ON) ..
FDC634P_NL ,P-Channel 2.5V Specified PowerTrench®, MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Battery management • ..
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FDC6333C_NL
30V N & P-Channel PowerTrench MOSFETs
FDC6333C FDC6333C Ò Ò PowerTrench These N & P-Channel MOSFETs are produced using · 2.5 A, 30V.R = 95 m W = 10 V Fairchild Semiconductor’s advanced PowerTrench R = 150 m W = 4.5 V process that has been especially tailored to minimize on-state resistance and yet maintain superior · –2.0 A, 30V.R = 150 m W = –10 V switching performance. R = 220 m W = –4.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint · Low gate charge for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. · High performance trench technology for extremely R.ON) · SuperSOT –6 package: small footprint (72% smaller than · DC/DC converter SO-8); low profile (1mm thick). · Load switch · LCD display inverter Q2(P) S1 43 52G2 S2 G1 16 Q1(N) o T=25C unless otherwise notedA Units VDrain-Source VoltageV VGate-Source Voltage ± ±V IDrain Current– ContinuousAD – Pulsed8 Power Dissipation for Single OperationPD W (Note 1c) T, TOperating and Storage Junction Temperature Range–55 to +150J°C Thermal Characteristics °C/WRThermal Resistance, Junction-to-Ambient q °C/WRThermal Resistance, Junction-to-Case qJC Device MarkingReel SizeTape widthQuantity FDC6333C3000 units Ó FDC6333C Rev C (W)2001 8mm7’’.333 Device Package Marking and Ordering Information 60(Note 1) JA 130(Note 1a) STG 0.7 0.9 (Note 1b) 0.96(Note 1a) –8 –2.02.5(Note 1a) GSS 2516 DSS –3030 Q2Q1ParameterSymbol Absolute Maximum Ratings ™-6SuperSOT Pin 1 SuperSOT -6 TM D1 D2 Applications DS( low GSDS(ON) @ V GSDS(ON) @ VQ2 GSDS(ON) @ V GSDS(ON) @ VQ1 FeaturesGeneral Description MOSFETs30V N & P-Channel October 2001
